The general objective of the course is to acquire an understanding of microelectronic circuits.
Learning outcomes (according to the Dublin descriptors)
#1 Knowledge and understanding: The course is aimed to acquire the methodologies for knowledge, understanding and analysis of analog and digital microelectronic circuits.
#2 Applying knowledge and understanding: Those skills will be stimulated and improved though both theoretical and applicative lectures.
#3 Making judgements: The course should provide the capability to understand and to analyse analog and digital circuits.
#4 Communication skills: Students will improve technical language by classroom and laboratory theoretical lessons.
#5 Learning skills: Analysis of complex problems will let the student improving its comprehension skills by describing each complex problem using a scientific methodology.
Elettrotecnica, Analisi Matematica, Fisica.
INTRODUCTION TO ELECTRONICS: Signals, Frequency Spectrum of Signals, Analog and Digital Signals, Circuit Models for Amplifiers, Frequency Response of Amplifiers, Digital Logic Inverters.
OPERATIONAL AMPLIFIERS: The Ideal Op Amp, The Inverting Configuration, The Noninverting Configuration, Difference Amplifiers, Effect of Finite Open-Loop Gain and Bandwidth on Circuit Performance, Large-Signal Operation of Op Amps, DC Imperfections, Integrators and Differentiators
DIODES: The Ideal Diode, Terminal Characteristics of Junction Diodes, Modeling the Diode Forward Characteristic, Operation in the Reverse Breakdown Region--Zener Diodes, Rectifier Circuits, Limiting and Clamping Circuits, Physical Operation of Diodes.
BIPOLAR JUNCTION TRANSISTORS (BJTS): Device Structure and Physical Operation, Current-Voltage Characteristics, The BJT as an Amplifier and as a Switch, BJT Circuits at DC, Biasing in BJT Amplifier Circuits, Small-Signal Operation and Models, Single-Stage BJT Amplifiers, The BJT Internal Capacitances and High-Frequency Modem, Frequency Response of the Common-Emitter Amplifier, The Basic BJT Digital Logic Inverter.
FIELD EFFECTS TRANSISTORS (FETS): Device Structure and Physical Operation, Current-Voltage Characteristics, MOSFET Circuits at DC, The MOSFET as an Amplifier and as a Switch, Biasing in MOS Amplifier Circuits, Small-Signal Operation and Models, Single-Stage MOS Amplifiers, The MOSFET Internal Capacitances and High-Frequency Model, Frequency Response of the CS Amplifier, The CMOS Digital Logic Inverter, The Depletion-Type MOSFET.
Static and dynamic properties of RAM, ROM, and nonvolatile memories. Flip-flop.
Testi consigliati: a) Richard C. Jaeger e Travis N. Blalock, Microelettronica 4/ed, McGraw Hill 2013; b) Paolo Spirito, Elettronica Digitale 3/Ed, McGraw-Hill 2006; c) Sedra, Smith, Circuiti per la Microelettronica, EdiSES; d) S. Daliento e A. Irace, Elettronica Generale, McGraw-Hill 2011
The purpose of the examination is to check the achievement of the aforementioned skills. The examination is separated in two stages, which take place within a few days:
- written examination; the written exam has the aim to evaluate the student's ability to solve simple problems by using the methods learned during the lectures and has selective nature (the student who does not exhibit sufficient knowledge of the matter will not be admitted to the oral examination). The duration of the written exam is 2.5 hours. The use of books, personal computers and smartphones is not allowed, whereas the scientific calculator can be adopted. In order to pass the examination, at least 2 exercises must be solved.
- Oral examination on all the topics covered in the lectures. The oral exam aims to evaluate the understanding of fundamental topics of the subject and the ability to connect and compare different aspects addressed within the lectures.
The final grade takes into account the result of the written and oral examinations and is expressed in thirtieths.