Università degli Studi di Napoli "Parthenope"

Teaching schedule

Academic year: 
2016/2017
Belonging course: 
Course of Bachelor's Degree Programme on COMPUTER SCIENCE, BIOMEDICAL AND TELECOMMUNICATIONS ENGINEERING
Disciplinary sector: 
ELECTRONICS (ING-INF/01)
Language: 
Italian
Credits: 
12
Year of study: 
3
Teachers: 
Cycle: 
First Semester
Hours of front activity: 
96

Language

Italian

Course description

The general objective of the course is to acquire an understanding of microelectronic circuits.

Learning outcomes (according to the Dublin descriptors)
#1 Knowledge and understanding: The course is aimed to acquire the methodologies for knowledge, understanding and analysis of analog and digital microelectronic circuits.
#2 Applying knowledge and understanding: Those skills will be stimulated and improved though both theoretical and applicative lectures.
#3 Making judgements: The course should provide the capability to understand and to analyse analog and digital circuits.
#4 Communication skills: Students will improve technical language by classroom and laboratory theoretical lessons.
#5 Learning skills: Analysis of complex problems will let the student improving its comprehension skills by describing each complex problem using a scientific methodology.

Prerequisites

Elettrotecnica, Analisi Matematica, Fisica.

Syllabus

INTRODUCTION TO ELECTRONICS: Signals, Frequency Spectrum of Signals, Analog and Digital Signals.
Basic Semiconductor Properties. Particle Motion. Dopants. Carriers and Current

DIODE: The Ideal Diode, Terminal Characteristics of Junction Diodes, Modeling the Diode Forward Characteristic, Operation in the Reverse Breakdown Region, Zener Diodes, Rectifier Circuits, Limiting and Clamping Circuits, Physical Operation of Diodes.
FIELD EFFECTS TRANSISTOR (FET): Device Structure and Physical Operation, Current-Voltage Characteristics, MOSFET Circuits at DC, The MOSFET as an Amplifier and as a Switch, Biasing in MOS Amplifier Circuits,

BIPOLAR JUNCTION TRANSISTOR (BJT): Device Structure and Physical Operation, Current-Voltage Characteristics, The BJT as an Amplifier and as a Switch, BJT Circuits at DC, Biasing in BJT Amplifier Circuits,

Circuit Models for Amplifiers, Frequency Response of Amplifiers.
Small-Signal Operation and Models of MOSFET and BJT. Single-Stage MOS Amplifiers: CS, CG and CD. Multi-stage Amplifiers. Single-Stage BJT Amplifiers: CE, CB and CC. Multi-stage Amplifiers.
OPERATIONAL AMPLIFIERS: The Ideal Op Amp, The Inverting Configuration, The Noninverting Configuration, Difference Amplifiers, Effect of Finite Open-Loop Gain and Bandwidth on Circuit Performance, Large-Signal Operation of Op Amps, DC Imperfections, Integrators and Differentiators

Fundamentals of Digital Electronics. Introduction to the digital circuits/gates and definition of the characteristics: noise margins, propagation delay or gate delay, fan-in and fan-out, power dissipation.
NMOS logic. Static and dynamic characteristics of the depletion-load NMOS logic and Pseudo-NMOS. NAND and NOR gates.
Complementary MOS (CMOS) Logic. Static and dynamic characteristics of the CMOS inverter, NAND and NOR gates. Full-CMOS gates. Three-state gates. CMOS buffer.

Combinatorial Circuits: decoder and encoder, multiplexer and demultiplexer.

Sequential circuits: Latch SR, Flip-flop SR, JK and master slave. Register and counter by D and T Flip-flop.
Transmission gate by NMOS and CMOS.

Dynamic logics. Single-phase and Four-phase logic; Domino and Domino NP logic.
Semiconductor memory. NOR and NAND, static and dynamic ROM. Programmable ROM. Double gate MOS. EPROM, EEPROM and Flash. Read and write memory (RAM), static SRAM (6T memory cell) and dynamic DRAM (1T memory cell).

INTRODUCTION TO ELECTRONICS (2 hours): Signals, Frequency Spectrum of Signals, Analog and Digital Signals.

Basic SEMICONDUCTOR Properties (2 hours). Particle Motion. Dopants. Carriers and Current

DIODE (8 hours): The Ideal Diode, Terminal Characteristics of Junction Diodes, Modeling the Diode Forward Characteristic, Operation in the Reverse Breakdown Region, Zener Diodes, Rectifier Circuits, Limiting and Clamping Circuits, Physical Operation of Diodes.

FIELD EFFECTS TRANSISTOR (FET) (12 hours): Device Structure and Physical Operation, Current-Voltage Characteristics, MOSFET Circuits at DC, The MOSFET as an Amplifier and as a Switch, Biasing in MOS Amplifier Circuits,

BIPOLAR JUNCTION TRANSISTOR (BJT) (8 hours): Device Structure and Physical Operation, Current-Voltage Characteristics, The BJT as an Amplifier and as a Switch, BJT Circuits at DC, Biasing in BJT Amplifier Circuits,

Circuit Models for Amplifiers (14 hours), Frequency Response of Amplifiers.
Small-Signal Operation and Models of MOSFET and BJT. Single-Stage MOS Amplifiers: CS, CG and CD. Multi-stage Amplifiers. Single-Stage BJT Amplifiers: CE, CB and CC. Multi-stage Amplifiers.

OPERATIONAL AMPLIFIERS (10 hours): The Ideal Op Amp, The Inverting Configuration, The Noninverting Configuration, Difference Amplifiers, Effect of Finite Open-Loop Gain and Bandwidth on Circuit Performance, Large-Signal Operation of Op Amps, DC Imperfections, Integrators and Differentiators

Fundamentals of DIGITAL ELECTRONICS (4 hours). Introduction to the digital circuits/gates and definition of the characteristics: noise margins, propagation delay or gate delay, fan-in and fan-out, power dissipation.

NMOS logic (8 hours). Static and dynamic characteristics of the depletion-load NMOS logic and Pseudo-NMOS. NAND and NOR gates.

Complementary MOS (CMOS) Logic (10 hours). Static and dynamic characteristics of the CMOS inverter, NAND and NOR gates. Full-CMOS gates. Three-state gates. CMOS buffer.

COMBINATORIAL CIRCUITS (2 hours): decoder and encoder, multiplexer and demultiplexer.

SEQUENTIAL CIRCUITS (2 hours): Latch SR, Flip-flop SR, JK and master slave. Register and counter by D and T Flip-flop.

TRANSMISSION GATE by NMOS and CMOS (2 hours).

DYNAMIC LOGICS (4 hours). Single-phase and Four-phase logic; Domino and Domino NP logic.

SEMICONDUCTOR MEMORY (8 hours). NOR and NAND, static and dynamic ROM. Programmable ROM. Double gate MOS. EPROM, EEPROM and Flash. Read and write memory (RAM), static SRAM (6T memory cell) and dynamic DRAM (1T memory cell).

Teaching Methods

Frontal lectures; classroom exercises.

Textbooks

Books: a) Richard C. Jaeger e Travis N. Blalock, Microelettronica Ved, McGraw Hill 2013; b) Paolo Spirito, Elettronica Digitale 3/Ed, McGraw-Hill 2006; c) Sedra, Smith, Circuiti per la Microelettronica, EdiSES; d) S. Daliento e A. Irace, Elettronica Generale, McGraw-Hill 2011

Learning assessment

The purpose of the examination is to check the achievement of the aforementioned skills. The examination is separated in two stages, which take place within a few days:
- written examination; the written exam has the aim to evaluate the student's ability to solve simple problems by using the methods learned during the lectures and has selective nature (the student who does not exhibit sufficient knowledge of the matter will not be admitted to the oral examination). The duration of the written exam is 2.5 hours. The use of books, personal computers and smartphones is not allowed, whereas the scientific calculator can be adopted. In order to pass the examination, at least 2 exercises must be solved.
- Oral examination on all the topics covered in the lectures. The oral exam aims to evaluate the understanding of fundamental topics of the subject and the ability to connect and compare different aspects addressed within the lectures.
The final grade considers the results of the written and oral examinations and is expressed in thirtieths.

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