Università degli Studi di Napoli "Parthenope"

Teaching schedule

Academic year: 
2014/2015
Belonging course: 
Course of Bachelor's Degree Programme on COMPUTER SCIENCE, BIOMEDICAL AND TELECOMMUNICATIONS ENGINEERING
Location: 
Napoli
Disciplinary sector: 
ELECTRONICS (ING-INF/01)
Language: 
Italian
Credits: 
12
Year of study: 
3
Teachers: 
Cycle: 
First Semester
Hours of front activity: 
96

Language

Course description

The general objective of the course is to acquire an understanding of microelectronic circuits.

Learning outcomes (according to the Dublin descriptors)
#1 Knowledge and understanding: The course is aimed to acquire the methodologies for knowledge, understanding and analysis of analog and digital microelectronic circuits.
#2 Applying knowledge and understanding: Those skills will be stimulated and improved though both theoretical and applicative lectures.
#3 Making judgements: The course should provide the capability to understand and to analyse analog and digital circuits.
#4 Communication skills: Students will improve technical language by classroom and laboratory theoretical lessons.
#5 Learning skills: Analysis of complex problems will let the student improving its comprehension skills by describing each complex problem using a scientific methodology.

Prerequisites

Elettrotecnica, Analisi Matematica, Fisica.

Syllabus

INTRODUCTION TO ELECTRONICS: Signals, Frequency Spectrum of Signals, Analog and Digital Signals, Circuit Models for Amplifiers, Frequency Response of Amplifiers, Digital Logic Inverters.
OPERATIONAL AMPLIFIERS: The Ideal Op Amp, The Inverting Configuration, The Noninverting Configuration, Difference Amplifiers, Effect of Finite Open-Loop Gain and Bandwidth on Circuit Performance, Large-Signal Operation of Op Amps, DC Imperfections, Integrators and Differentiators
DIODES: The Ideal Diode, Terminal Characteristics of Junction Diodes, Modeling the Diode Forward Characteristic, Operation in the Reverse Breakdown Region--Zener Diodes, Rectifier Circuits, Limiting and Clamping Circuits, Physical Operation of Diodes.
BIPOLAR JUNCTION TRANSISTORS (BJTS): Device Structure and Physical Operation, Current-Voltage Characteristics, The BJT as an Amplifier and as a Switch, BJT Circuits at DC, Biasing in BJT Amplifier Circuits, Small-Signal Operation and Models, Single-Stage BJT Amplifiers, The BJT Internal Capacitances and High-Frequency Modem, Frequency Response of the Common-Emitter Amplifier, The Basic BJT Digital Logic Inverter.
FIELD EFFECTS TRANSISTORS (FETS): Device Structure and Physical Operation, Current-Voltage Characteristics, MOSFET Circuits at DC, The MOSFET as an Amplifier and as a Switch, Biasing in MOS Amplifier Circuits, Small-Signal Operation and Models, Single-Stage MOS Amplifiers, The MOSFET Internal Capacitances and High-Frequency Model, Frequency Response of the CS Amplifier, The CMOS Digital Logic Inverter, The Depletion-Type MOSFET.
Static and dynamic properties of RAM, ROM, and nonvolatile memories. Flip-flop.

Teaching Methods

Textbooks

Testi consigliati
Testi consigliati: a) Richard C. Jaeger e Travis N. Blalock, Microelettronica 4/ed, McGraw Hill 2013; b) Paolo Spirito, Elettronica Digitale 3/Ed, McGraw-Hill 2006; c) Sedra, Smith, Circuiti per la Microelettronica, EdiSES; d) S. Daliento e A. Irace, Elettronica Generale, McGraw-Hill 2011

Learning assessment

More information